insulated gate bipolar transistor with ultra-low vf diode for induction heating and soft switching applications e g n-channel c features ? low v ce (on) trench igbt technology ? low switching losses ? square rbsoa ? ultra-low v f diode ? 1300vpk repetitive transient capacity ? 100% of the parts tested for i lm ? positive v ce (on) temperature co-efficient ? tight parameter distribution ? lead free package benefits ? device optimized for induction heating and soft switching applications ? high efficiency due to low v ce(on) , low switching losses and ultra-low v f ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi g c e gate collector emitter to-247ad
v ces = 1200v i c = 45a, t c = 100c t j(max) = 150c v ce(on) typ. = 1.7v @i c = 30a base part number package type orderable part number form quantity IRG7PH42UD1MPBF to-247ad tube 25 IRG7PH42UD1MPBF standard pack absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v (br) transient repetitive transient collector-to-emitter voltage 1300 i c @ t c = 25c continuous collector current 85 i c @ t c = 100c continuous collector current 45 i cm pulse collector current, v ge =15v 200 i lm clamped inductive load current, v ge =20v 120 i f @ t c = 25c diode continous forward current 70 i f @ t c = 100c diode continous forward current 35 i frm diode repetitive peak forward current 120 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 313 p d @ t c = 100c maximum power dissipation 125 t j operating junction and -55 to +150 t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ??? ??? 0.4 r jc (diode) thermal resistance junction-to-case-(each diode) ??? ??? 1.05 r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ??? a w c c/w v g g e c
notes: v cc = 80% (v ces ), v ge = 20v, l = 22 h, r g = 10 . pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at t j of approximately 90c. calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 78a. note that curren t limitations arising from heating of the device leads may occur with some lead mounting arrangements. fbsoa operating conditions only v ge = 0v, t j = 75c pw 10 s electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 100 a v (br)ces / t j temperature coeff. of breakdown voltage ? 1.2 ? v/c v ge = 0v, i c = 2.0ma (25c-150c) ?1.72.0 i c = 30a, v ge = 15v, t j = 25c ?2.0? i c = 30a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v v ce = v ge , i c = 1.0ma gfe forward transconductance ? 32 ? s v ce = 50v, i c = 30a, pw = 80 s ? 1.0 100 v ge = 0v, v ce = 1200v ? 230 ? v ge = 0v, v ce = 1200v, t j = 150c ? 1.15 1.30 i f = 30a ?1.10? i f = 30a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 180 270 i c = 30a q ge gate-to-emitter charge (turn-on) ? 24 36 nc v ge = 15v q gc gate-to-collector charge (turn-on) ? 70 110 v cc = 600v i c = 30a, v cc = 600v, v ge = 15v e of f turn-off switching loss ? 1210 1450 r g = 10 , l = 200 h,t j = 25c energy losses include tail t d(off) turn-off delay time ? 270 290 i c = 30a, v cc = 600v, v ge = 15v t f fall time ? 35 43 r g = 10 , l = 200 h,t j = 25c i c = 30a, v cc = 600v, v ge = 15v e of f turn-off switching loss ? 1936 ? jr g = 10 h,t j = 150c energy losses include tail t d(off) turn-off delay time ? 300 ? ns i c = 30a, v cc = 600v, v ge = 15v t f fall time ? 160 ? r g = 10 , l = 200 h, t j = 150c c ies input capacitance ? 3390 ? v ge = 0v c oes output capacitance ? 130 ? pf v cc = 30v c res reverse transfer capacitance ? 83 ? f = 1.0mhz t j = 150c, i c = 120a rbsoa reverse bias safe operating area full square v cc = 960v, vp =1200v rg = 10 , v ge = +20v to 0v conditions a v v j ns v ce(on) collector-to-emitter saturation voltage i ces collector-to-emitter leakage current v fm diode forward voltage drop
fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 4 - reverse bias soa t j = 150c; v ge = 20v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80 s 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) fig. 3 - typical gate threshold voltage (normalized) vs. junction temperature 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 i c , c o l l e c t o r c u r r e n t ( a ) limited by package 25 50 75 100 125 150 t c (c) 0 50 100 150 200 250 300 350 p t o t ( w ) 25 50 75 100 125 150 t j , temperature (c) 0.5 0.6 0.7 0.8 0.9 1.0 v g e ( t h ) , g a t e t h r e s h o l d v o l t a g e ( n o r m a l i z e d ) i c = 1.0ma 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v
fig. 8 - typ. diode forward voltage drop characteristics fig. 9 - typical v ce vs. v ge t j = -40c fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 150c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10 s 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a fig. 7 - typ. igbt output characteristics t j = 150c; tp = 80 s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 246810 v ge , gate-to-emitter voltage (v) 0 20 40 60 80 100 120 i c e , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 150c 0.0 0.5 1.0 1.5 2.0 v f (v) 0 20 40 60 80 100 120 140 i f ( a ) 25c 150c 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a
fig. 18 - typical gate charge vs. v ge i ce = 30a; l = 680 h fig. 13 - typ. energy loss vs. i c t j = 150c; l = 200 h; v ce = 600v, r g = 10 ; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 150c; l = 200 h; v ce = 600v, r g = 10 ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 150c; l = 200 h; v ce = 600v, i ce = 30a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l = 200 h; v ce = 600v, i ce = 30a; v ge = 15v fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 50 100 150 200 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces =600v v ces = 400v 0 20 40 60 80 100 120 r g ( ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) td off t f 0 25 50 75 100 125 r g ( ) 1500 2500 3500 4500 5500 6500 e n e r g y ( j ) e off 0 10 20 30 40 50 60 70 i c (a) 100 1000 s w i c h i n g t i m e ( n s ) td off t f 0 10203040506070 i c (a) 0 1000 2000 3000 4000 5000 e n e r g y ( j ) e off
fig 19. maximum transient thermal impedance, junction-to-case (igbt) fig. 20. maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.01186 0.00001 0.39298 0.000547 0.43450 0.003563 0.22096 0.021596 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.1306 0.000313 0.1752 0.002056 0.0814 0.008349 0.0031 0.0431 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4
fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - switching loss circuit fig.c.t.4 - bvces filter circuit fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.3 0 1k vcc dut l l rg 80 v dut vcc + - l rg vcc dut / driver diode clamp / dut -5v g force c sens e 100k dut 0.0075 f d1 22k e force c force e sense -100 0 100 200 300 400 500 600 700 800 -1-0.500.511.52 time( s) v ce (v) -10 0 10 20 30 40 50 60 70 80 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf
to-247ad package is not recommended for surface mount application. 2x c "a" "a" e e2/2 q e2 2x l1 l d a e 2x b2 3x b lead tip see vi e w " b " b4 b a ? .010 b a a2 a1 ? .010 b a d1 s e1 thermal pad -a- ? p ? .010 b a vi e w: "b " s e ct i on: c- c, d- d, e - e (b, b2, b4) (c) base metal plating vie w: "a" - "a" year 1 = 2001 dat e code part number int ernat ional logo rectifier assembly 56 57 irfpe30 135h line h i ndi cates "l ead- f r ee" week 35 lot code in the assembly line "h" as s emble d on ww 35, 2001 note: "p" in assembly line position example: with assembly t his is an irfpe30 lot code 5657
ir world headquarters: 101 n. sepulveda blvd.., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. qualification standards can be found at international rectifier?s web site http://www .irf.com/product-info/reliability applicable version of jedec standard at the time of product release. date comments 4/25/2013 corrected part number from "irg7ph42ud1m" to "IRG7PH42UD1MPBF". revision history n/a rohs c ompliant yes qualification information ? qualification level industrial ? (per je de c je s d47f ) ?? moisture sensitivity level to-247ad
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